Mosfet K6a65d

Type Designator: TK6A65D

Mosfet K11a65d
Transistor Mosfet K6a65d

UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Buy Calvas 10pcs TK6A65D K6A65D TO-220 MOSFET N-Ch FET 650V 4.0s IDSS 10 uA.95 Ohm New original: MOSFET - Amazon.com FREE DELIVERY possible on eligible purchases.

Switching Regulator Applications, K6A65D datasheet, K6A65D circuit, K6A65D data sheet: TOSHIBA, alldatasheet, datasheet, Datasheet search site for Electronic.

Marking Code: K6A65D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 1.11 Ohm

Package: TO220SIS

TK6A65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TK6A65D Datasheet (PDF)

0.1. tk6a65d.pdf Size:199K _toshiba

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK6A65D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

0.2. tk6a65d.pdf Size:253K _inchange_semiconductor

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A65DITK6A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.95 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Mosfet K11a65d

8.1. tk6a65w.pdf Size:376K _toshiba

TK6A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK6A65WTK6A65WTK6A65WTK6A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.85 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

8.2. tk6a65w.pdf Size:253K _inchange_semiconductor

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A65WITK6A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.85 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.18mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

Datasheet: TK60S06K3L, TK65L60V, TK65S04K3L, TK6A45DA, TK6A50D, TK6A53D, TK6A55DA, TK6A60D, IRF1404, TK6P53D, TK70A06J1, TK70J04J3, TK70J20D, TK70X04K3, TK70X06K3, TK75A06K3, TK7A45DA.

Transistor Mosfet K6a65d

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